低功耗绝热CMOS接口的性能分析

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI:10.1109/EDKCON56221.2022.10032867

Lalit Rai, Prashant Kumar, N. Gupta, Rashmi Gupta

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引用次数: 0

摘要

本文对绝热和标准CMOS接口电路进行了比较分析，以期最大限度地降低功耗。主要考虑的是比较各接口的功耗，求得最优的结果。对所有存储单元进行了瞬态分析。此外，还研究了功耗随温度和电源的变化规律。分析了功率延迟积随电源的变化规律。仿真在TSPICE的65nm CMOS技术上实现。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Performance Analysis of Adiabatic CMOS Interface for Low Power Applications

This paper presents a comparative analysis of Adiabatic and Standard CMOS Interface circuit, for minimizing the power dissipation. The main consideration is to compare the power dissipation of interfaces and optimum results should be obtained. The transient analysis in all the memory cells have been carried out. Furthermore, the variation of power dissipation with temperature and power supply have been investigated. The variation of power delay product with power supply has also been analyzed. The simulations are implemented in 65nm CMOS technology in TSPICE.

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2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

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