{"title":"SOI CMOS mesfet的4端Angelov模型","authors":"S. Wilk, W. Lepkowski, P. Habibimehr, T. Thornton","doi":"10.1109/RFIC.2015.7337779","DOIUrl":null,"url":null,"abstract":"This work describes an improved Angelov/Chalmers MESFET model which includes substrate bias effects. The 4-terminal model employs a new and simplified gate current extraction method based on a forward and reverse diode equation which can be independently modified. The improved model is applied to a silicon metal-semiconductor-field-effect-transistor (MESFET) that was fabricated using a 45nm SOI CMOS process and designed for RF power amplifier applications. The model fits across DC and RF parameters and also shows a good fit to a 2.5GHz load pull measurement used for verification.","PeriodicalId":121490,"journal":{"name":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"4-terminal Angelov model for SOI CMOS MESFETs\",\"authors\":\"S. Wilk, W. Lepkowski, P. Habibimehr, T. Thornton\",\"doi\":\"10.1109/RFIC.2015.7337779\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work describes an improved Angelov/Chalmers MESFET model which includes substrate bias effects. The 4-terminal model employs a new and simplified gate current extraction method based on a forward and reverse diode equation which can be independently modified. The improved model is applied to a silicon metal-semiconductor-field-effect-transistor (MESFET) that was fabricated using a 45nm SOI CMOS process and designed for RF power amplifier applications. The model fits across DC and RF parameters and also shows a good fit to a 2.5GHz load pull measurement used for verification.\",\"PeriodicalId\":121490,\"journal\":{\"name\":\"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2015.7337779\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2015.7337779","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
摘要
本文描述了一种改进的包含衬底偏置效应的Angelov/Chalmers MESFET模型。四端模型采用了一种新的简化的栅极电流提取方法，该方法基于可独立修改的正向和反向二极管方程。将改进的模型应用于采用45nm SOI CMOS工艺制造的用于射频功率放大器的硅金属半导体场效应晶体管(MESFET)。该模型适用于直流和射频参数，也显示出很好的适合用于验证的2.5GHz负载拉力测量。
This work describes an improved Angelov/Chalmers MESFET model which includes substrate bias effects. The 4-terminal model employs a new and simplified gate current extraction method based on a forward and reverse diode equation which can be independently modified. The improved model is applied to a silicon metal-semiconductor-field-effect-transistor (MESFET) that was fabricated using a 45nm SOI CMOS process and designed for RF power amplifier applications. The model fits across DC and RF parameters and also shows a good fit to a 2.5GHz load pull measurement used for verification.
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