带薄膜体腔的2.5GHz电压控制振荡器

2007 International Conference on Microwave and Millimeter Wave Technology Pub Date : 2007-04-18 DOI:10.1109/ICMMT.2007.381469

Y. Kao, Jon-Hong Lin, Nai-yuan Kang, Yion-Ni Liu

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引用次数: 2

摘要

设计并制作了一种薄膜体声谐振器(FBAR)。利用该谐振器设计了一个2.5 GHz的压控FBAR振荡器，并采用时间0.18 um的CMOS工艺进行了封装。在10 kHz偏移时，模拟相位噪声为-110 dBc/Hz。振荡器提供9.1 dBm输出功率，从+1.8 V直流电源消耗37 mA。

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A 2.5GHz Volag Controlled Oscillator with Film Bulk Acoustic Resonator

A film bulk acoustic resonator (FBAR) is designed and fabricated in this paper. Using this resonator, a 2.5 GHz voltage-controlled FBAR oscillator is designed and taped out with time 0.18 um CMOS process. The simulated phase noise is -110 dBc/Hz at 10 kHz offset. The oscillator provides 9.1 dBm of output power and consumes 37 mA from +1.8 V DC power supply.

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来源期刊

2007 International Conference on Microwave and Millimeter Wave Technology

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