带薄膜体腔的2.5GHz电压控制振荡器

2007 International Conference on Microwave and Millimeter Wave Technology Pub Date : 2007-04-18 DOI:10.1109/ICMMT.2007.381469

Y. Kao, Jon-Hong Lin, Nai-yuan Kang, Yion-Ni Liu

{"title":"带薄膜体腔的2.5GHz电压控制振荡器","authors":"Y. Kao, Jon-Hong Lin, Nai-yuan Kang, Yion-Ni Liu","doi":"10.1109/ICMMT.2007.381469","DOIUrl":null,"url":null,"abstract":"A film bulk acoustic resonator (FBAR) is designed and fabricated in this paper. Using this resonator, a 2.5 GHz voltage-controlled FBAR oscillator is designed and taped out with time 0.18 um CMOS process. The simulated phase noise is -110 dBc/Hz at 10 kHz offset. The oscillator provides 9.1 dBm of output power and consumes 37 mA from +1.8 V DC power supply.","PeriodicalId":409971,"journal":{"name":"2007 International Conference on Microwave and Millimeter Wave Technology","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 2.5GHz Volag Controlled Oscillator with Film Bulk Acoustic Resonator\",\"authors\":\"Y. Kao, Jon-Hong Lin, Nai-yuan Kang, Yion-Ni Liu\",\"doi\":\"10.1109/ICMMT.2007.381469\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A film bulk acoustic resonator (FBAR) is designed and fabricated in this paper. Using this resonator, a 2.5 GHz voltage-controlled FBAR oscillator is designed and taped out with time 0.18 um CMOS process. The simulated phase noise is -110 dBc/Hz at 10 kHz offset. The oscillator provides 9.1 dBm of output power and consumes 37 mA from +1.8 V DC power supply.\",\"PeriodicalId\":409971,\"journal\":{\"name\":\"2007 International Conference on Microwave and Millimeter Wave Technology\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 International Conference on Microwave and Millimeter Wave Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMMT.2007.381469\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Conference on Microwave and Millimeter Wave Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2007.381469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

设计并制作了一种薄膜体声谐振器(FBAR)。利用该谐振器设计了一个2.5 GHz的压控FBAR振荡器，并采用时间0.18 um的CMOS工艺进行了封装。在10 kHz偏移时，模拟相位噪声为-110 dBc/Hz。振荡器提供9.1 dBm输出功率，从+1.8 V直流电源消耗37 mA。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 2.5GHz Volag Controlled Oscillator with Film Bulk Acoustic Resonator

A film bulk acoustic resonator (FBAR) is designed and fabricated in this paper. Using this resonator, a 2.5 GHz voltage-controlled FBAR oscillator is designed and taped out with time 0.18 um CMOS process. The simulated phase noise is -110 dBc/Hz at 10 kHz offset. The oscillator provides 9.1 dBm of output power and consumes 37 mA from +1.8 V DC power supply.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 International Conference on Microwave and Millimeter Wave Technology

自引率

0.00%

发文量