{"title":"一种适用于1T-DRAM的bMPI结构的新型垂直MOSFET","authors":"Cheng-Hsin Chen, Jyi-Tsong Lin, Y. Eng, Po-Hsieh Lin, Hsien-Nan Chiu, Tzu-Feng Chang, Chih-Hsuan Tai, Kuan-Yu Lu, Yi-Hsuan Fan, Yu-Che Chang, Hsuan-Hsu Chen","doi":"10.1080/10584587.2011.576903","DOIUrl":null,"url":null,"abstract":"This paper proposes a novel vertical MOSFET with the middle partial insulation and block oxide (bMPI) structure for 1T-DRAM application. The bMPI 1T-DRAM can increase the pseudo-neutral region due to the bMPI under the vertical channel and its device sensing current window is improved about 95% when compared to the planer bMPI 1T-DRAM. Because of the double gate structure, the proposed device has great gate controllability; hence, it can reduce the short-channel effects and enhance the electrical characteristics.","PeriodicalId":412093,"journal":{"name":"2010 International Symposium on Next Generation Electronics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A novel vertical MOSFET with bMPI structure for 1T-DRAM application\",\"authors\":\"Cheng-Hsin Chen, Jyi-Tsong Lin, Y. Eng, Po-Hsieh Lin, Hsien-Nan Chiu, Tzu-Feng Chang, Chih-Hsuan Tai, Kuan-Yu Lu, Yi-Hsuan Fan, Yu-Che Chang, Hsuan-Hsu Chen\",\"doi\":\"10.1080/10584587.2011.576903\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes a novel vertical MOSFET with the middle partial insulation and block oxide (bMPI) structure for 1T-DRAM application. The bMPI 1T-DRAM can increase the pseudo-neutral region due to the bMPI under the vertical channel and its device sensing current window is improved about 95% when compared to the planer bMPI 1T-DRAM. Because of the double gate structure, the proposed device has great gate controllability; hence, it can reduce the short-channel effects and enhance the electrical characteristics.\",\"PeriodicalId\":412093,\"journal\":{\"name\":\"2010 International Symposium on Next Generation Electronics\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Symposium on Next Generation Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1080/10584587.2011.576903\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Symposium on Next Generation Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/10584587.2011.576903","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel vertical MOSFET with bMPI structure for 1T-DRAM application
This paper proposes a novel vertical MOSFET with the middle partial insulation and block oxide (bMPI) structure for 1T-DRAM application. The bMPI 1T-DRAM can increase the pseudo-neutral region due to the bMPI under the vertical channel and its device sensing current window is improved about 95% when compared to the planer bMPI 1T-DRAM. Because of the double gate structure, the proposed device has great gate controllability; hence, it can reduce the short-channel effects and enhance the electrical characteristics.
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