高性能IGBT硅直接键合方法的表征

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764093

Tae Hoon Kim, C. Yun, Soo-Seong Kim, H. Jang

{"title":"高性能IGBT硅直接键合方法的表征","authors":"Tae Hoon Kim, C. Yun, Soo-Seong Kim, H. Jang","doi":"10.1109/ISPSD.1999.764093","DOIUrl":null,"url":null,"abstract":"Silicon direct bonding methods for 1200 V IGBTs are introduced and their effects on the device characteristics are discussed. Device characteristics of SDB IGBTs are mainly determined by the ion implantation, oxide etching and cleaning conditions. A 1200 V punchthrough (PT) IGBT fabricated using this bonding methodology exhibits V/sub ce,sat/ of 2.5 V, E/sub off/ of 30 uJ/A and short-circuit withstanding time of 50 /spl mu/s.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Characterization of silicon direct bonding methodology for high performance IGBT\",\"authors\":\"Tae Hoon Kim, C. Yun, Soo-Seong Kim, H. Jang\",\"doi\":\"10.1109/ISPSD.1999.764093\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon direct bonding methods for 1200 V IGBTs are introduced and their effects on the device characteristics are discussed. Device characteristics of SDB IGBTs are mainly determined by the ion implantation, oxide etching and cleaning conditions. A 1200 V punchthrough (PT) IGBT fabricated using this bonding methodology exhibits V/sub ce,sat/ of 2.5 V, E/sub off/ of 30 uJ/A and short-circuit withstanding time of 50 /spl mu/s.\",\"PeriodicalId\":352185,\"journal\":{\"name\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1999.764093\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1999.764093","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

介绍了用于1200v igbt的硅直接键合方法，并讨论了它们对器件特性的影响。SDB igbt的器件特性主要取决于离子注入、氧化物蚀刻和清洗条件。采用这种键合方法制备的1200v穿孔(PT) IGBT具有V/sub - ce、sat/ 2.5 V、E/sub - off/ 30 uJ/A和耐短路时间50 /spl mu/s。

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Characterization of silicon direct bonding methodology for high performance IGBT

Silicon direct bonding methods for 1200 V IGBTs are introduced and their effects on the device characteristics are discussed. Device characteristics of SDB IGBTs are mainly determined by the ion implantation, oxide etching and cleaning conditions. A 1200 V punchthrough (PT) IGBT fabricated using this bonding methodology exhibits V/sub ce,sat/ of 2.5 V, E/sub off/ of 30 uJ/A and short-circuit withstanding time of 50 /spl mu/s.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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