具有无源栅极的高速横向igbt

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1487958

T. Terashima, J. Moritani

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引用次数: 17

摘要

提出了一种在集电极部分加无源栅极的横向igbt。由于集电极电压直接驱动控制寄生PNPTr的无源栅极，高速关断与低导通电阻兼容，而没有诸如snapback I-V特性的副作用。仿真结果表明，下降时间从120ns急剧下降到5ns。制作的器件实现了6.8欧姆/毫米/sup 2/ @ Kc=2V的导通电阻，780V的阻断能力和改进的关断特性，与仿真结果相似。

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High speed lateral-IGBT with a passive gate

A lateral-IGBT with a passive gate on collector portion has been proposed. Since the collector voltage directly drives the passive gate which controls the parasitic PNPTr, high-speed turn-off is compatible with low on-resistance without a side effect such as snapback I-V characteristics. Simulation results have shown drastic drop of fall time from 120ns to 5ns. Fabricated device have realize 6.8 ohm/mm/sup 2/ @ Kc=2V specific on-resistance, 780V blocking capability and improved turn-off characteristics similar to simulation results.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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