浮体SOI nmosfet的瞬态效应

1995 IEEE International SOI Conference Proceedings Pub Date : 1995-10-03 DOI:10.1109/SOI.1995.526486

J. Gautier, K. Jenkins, J. Sun

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引用次数: 10

摘要

SOI装置浮体运行的结果是存在扭结效应和超理想阈下斜率等现象。在本文中，我们报告了通过高速测量和二维数值模拟观察到的快速栅极脉冲的相关瞬态效应。结果表明，由于浮体工作，SOI器件在快速开关过程中的漏极电流与直流电流相差很大。为了精确地模拟电路，必须考虑到这一点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Transient effects in floating body SOI NMOSFETs

The consequence of floating body operation of SOI devices is the existence of several phenomena, like the kink effect and supra ideal subthreshold slope. In this paper, we report the associated transient effects observed for fast gate pulses by high speed measurements and 2-D numerical simulations. It is shown that due to floating body operation, the drain current of SOI devices during fast switching is very different from the DC value. This must be taken into account for accurate simulation of circuits.

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1995 IEEE International SOI Conference Proceedings

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