用于MEMS的Au-Sn和Cu-Sn晶圆级滑动键的可靠性性能

Proceedings of the 5th Electronics System-integration Technology Conference (ESTC) Pub Date : 2014-11-24 DOI:10.1109/ESTC.2014.6962771

H. Xu, A. Rautiainen, V. Vuorinen, E. Osterlund, T. Suni, H. Heikkinen, P. Monnoyer, M. Paulasto-Krockel

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引用次数: 6

摘要

晶圆级固液互扩散键合(slip)用于封装MEMS器件。滑动键中的金属可以通过吸收机械和热机械应力来提高可靠性。本文通过剪切/拉伸试验、剪切疲劳试验、混合流动气体(MFG)试验、高温储存(HTS)试验和热冲击(TS)试验，系统表征和评价了晶片级Au-Sn-(Ni)和Cu-Sn滑动键的可靠性。分析了其失效模式和物理机制。总的来说，结果表明了滑动键的高机械强度和可靠性。利用可靠性研究结果，可以改进MEMS封装密封键的设计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reliability performance of Au-Sn and Cu-Sn wafer level SLID bonds for MEMS

Wafer level Solid-Liquid Interdiffusion (SLID) bonding is used to encapsulate MEMS devices. The metals in SLID bonds can improve the reliability by absorbing mechanical and thermo-mechanical stresses. In this paper, the reliability of wafer level Au-Sn-(Ni) and Cu-Sn SLID bonds was systematically characterized and evaluated with shear/tensile tests, shear fatigue test, mixed flow gas (MFG) test, high temperature storage (HTS) test and thermal shock (TS) test. The failure modes and physical mechanisms were analyzed. Overall, the results demonstrated the high mechanical strength and reliability of SLID bonds. Utilizing the reliability results the design of seal bonds for MEMS encapsulation could be improved.

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Proceedings of the 5th Electronics System-integration Technology Conference (ESTC)

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