主动磁场抵消系统

2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo) Pub Date : 2013-12-01 DOI:10.1109/EMCCOMPO.2013.6735184

Weiyang Sun, Feng-Chang Chuang, Yu-Lin Song, Chwen Yu, T. Ma, Tzong-Lin Wu, Luh-Maan Chang

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引用次数: 4

摘要

在新一代纳米晶圆厂中，极低频磁场对成品率有显著影响，特别是当加工深度小于14纳米时。对于sem, tem, stem, FIB写入器和电子束写入器等敏感设备，建议极低频磁场应低于0.5毫高斯以保证良好的良率。因此，迫切需要通过材料屏蔽、导线排列和有源抵消等有源/无源方法来减轻磁场。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Active magnetic field canceling system

The extremely low frequency (ELF) magnetic field has significant impact on yield rate especially when the processing reaches less than 14 nanometer in next-generation nano-Fab. For sensitive equipments such as the SEMs, TEMs, STEMs, FIB writers, and E-beam writers, it suggests that the ELF magnetic field should be lower than 0.5 milli-Gauss to guarantee good yield. Therefore, mitigating the magnetic field by active/passive approaches such as the material shielding, wire permutation, and active canceling are highly demanded.

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来源期刊

2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)

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