{"title":"适合单片集成的半绝缘InP衬底上生长的高速InGaAs PIN光电二极管","authors":"K. Li, E. Rezek, H. Law","doi":"10.1364/igwo.1984.tha3","DOIUrl":null,"url":null,"abstract":"The integration of a PIN photodiode with an FET is attractive to obtain low noise, high speed photoreceivers for optical communication systems. Most of the high speed photodiode work to date has been done on conductive substrates which are not suitable for monolithic integration1-4. In this paper, we report a low operating voltage InGaAs PIN photodiode suitable for optoelectronic monolithic integration, fabricated on a semi-insulating InP substrate with the lowest reported dark current density of 2.5 x 10-6 A/cm2 at -10V bias (0.2nA for a 100μm diameter diode). At the operating voltage of -5V, an external quantum efficiency of >90% at 1.3μm and >83% at 1.55μm, a rise time of <35 ps and a FWHM of <45 ps have been measured.","PeriodicalId":208165,"journal":{"name":"Seventh Topical Meeting on Integrated and Guided-Wave Optics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High Speed InGaAs PIN Photodiode Grown on Semi-Insulating InP Substrate Suitable for Monolithic Integration\",\"authors\":\"K. Li, E. Rezek, H. Law\",\"doi\":\"10.1364/igwo.1984.tha3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The integration of a PIN photodiode with an FET is attractive to obtain low noise, high speed photoreceivers for optical communication systems. Most of the high speed photodiode work to date has been done on conductive substrates which are not suitable for monolithic integration1-4. In this paper, we report a low operating voltage InGaAs PIN photodiode suitable for optoelectronic monolithic integration, fabricated on a semi-insulating InP substrate with the lowest reported dark current density of 2.5 x 10-6 A/cm2 at -10V bias (0.2nA for a 100μm diameter diode). At the operating voltage of -5V, an external quantum efficiency of >90% at 1.3μm and >83% at 1.55μm, a rise time of <35 ps and a FWHM of <45 ps have been measured.\",\"PeriodicalId\":208165,\"journal\":{\"name\":\"Seventh Topical Meeting on Integrated and Guided-Wave Optics\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Seventh Topical Meeting on Integrated and Guided-Wave Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/igwo.1984.tha3\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Seventh Topical Meeting on Integrated and Guided-Wave Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/igwo.1984.tha3","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
PIN光电二极管与场效应管的集成是获得用于光通信系统的低噪声、高速光电接收器的重要途径。迄今为止，大多数高速光电二极管的工作都是在不适合单片集成的导电衬底上完成的1-4。在本文中，我们报道了一种适用于光电子单片集成的低工作电压InGaAs PIN光电二极管，该二极管在半绝缘InP衬底上制造，在-10V偏置下(直径为100μm的二极管为0.2nA)的最低暗电流密度为2.5 × 10-6 a /cm2。在-5V工作电压下，测量到的外量子效率在1.3μm处>90%，在1.55μm处>83%，上升时间<35 ps, FWHM <45 ps。
High Speed InGaAs PIN Photodiode Grown on Semi-Insulating InP Substrate Suitable for Monolithic Integration
The integration of a PIN photodiode with an FET is attractive to obtain low noise, high speed photoreceivers for optical communication systems. Most of the high speed photodiode work to date has been done on conductive substrates which are not suitable for monolithic integration1-4. In this paper, we report a low operating voltage InGaAs PIN photodiode suitable for optoelectronic monolithic integration, fabricated on a semi-insulating InP substrate with the lowest reported dark current density of 2.5 x 10-6 A/cm2 at -10V bias (0.2nA for a 100μm diameter diode). At the operating voltage of -5V, an external quantum efficiency of >90% at 1.3μm and >83% at 1.55μm, a rise time of <35 ps and a FWHM of <45 ps have been measured.
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