50nm栅长CMOS的微观射频噪声仿真及噪声源建模

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398183

G. Niu, Yan Cui, S. S. Taylor

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引用次数: 1

摘要

采用流体动力噪声仿真方法对50 nm栅长CMOS的射频噪声进行了仿真。研究了Y和h表示的本征噪声源，并提出了本征噪声源的模型。

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Microscopic RF noise simulation and noise source modeling in 50 nm gate length CMOS

The RF noise of 50 nm gate length CMOS is simulated using hydrodynamic noise simulation. Intrinsic noise sources for the Y- and H-representations are examined and models of intrinsic noise sources are proposed.

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来源期刊

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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