G. Berghoff, O. Gibrat, E. Bergeault, B. Huyart, L. Jallet
{"title":"基于六端口技术的源拉和多谐波负载拉测量","authors":"G. Berghoff, O. Gibrat, E. Bergeault, B. Huyart, L. Jallet","doi":"10.1109/CPEM.1998.700021","DOIUrl":null,"url":null,"abstract":"An original measurement system for nonlinear microwave power transistor characterization, using six-port reflectometers, is presented. It allows independent active tuning of the output impedances at f/sub 0/ and 2f/sub 0/ (multiharmonic load-pull) and variation of the source impedance at the input port at f/sub 0/ (source-pull). Experimental results are shown for a commercial GaAs MESFET power transistor.","PeriodicalId":239228,"journal":{"name":"1998 Conference on Precision Electromagnetic Measurements Digest (Cat. No.98CH36254)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Source-pull and multiharmonic load-pull measurements based on six-port techniques\",\"authors\":\"G. Berghoff, O. Gibrat, E. Bergeault, B. Huyart, L. Jallet\",\"doi\":\"10.1109/CPEM.1998.700021\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An original measurement system for nonlinear microwave power transistor characterization, using six-port reflectometers, is presented. It allows independent active tuning of the output impedances at f/sub 0/ and 2f/sub 0/ (multiharmonic load-pull) and variation of the source impedance at the input port at f/sub 0/ (source-pull). Experimental results are shown for a commercial GaAs MESFET power transistor.\",\"PeriodicalId\":239228,\"journal\":{\"name\":\"1998 Conference on Precision Electromagnetic Measurements Digest (Cat. No.98CH36254)\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Precision Electromagnetic Measurements Digest (Cat. No.98CH36254)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CPEM.1998.700021\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Precision Electromagnetic Measurements Digest (Cat. No.98CH36254)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CPEM.1998.700021","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Source-pull and multiharmonic load-pull measurements based on six-port techniques
An original measurement system for nonlinear microwave power transistor characterization, using six-port reflectometers, is presented. It allows independent active tuning of the output impedances at f/sub 0/ and 2f/sub 0/ (multiharmonic load-pull) and variation of the source impedance at the input port at f/sub 0/ (source-pull). Experimental results are shown for a commercial GaAs MESFET power transistor.