基于Cell Stack工程的QLC可编程3D铁电NAND闪存

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) Pub Date : 2023-06-11 DOI:10.23919/VLSITechnologyandCir57934.2023.10185294

Sunghyun Yoon, Sung I. Hong, Daehyun Kim, Garam Choi, Young Mo Kim, Kyunghoon Min, Seiyon Kim, Myung-Hee Na, Seonyong Cha

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引用次数: 1

摘要

据我们所知，3D铁电NAND (Fe-NAND)四能级电池(QLC)的操作首次得到了演示，使用3D CTN NAND测试车进行了批量生产。3D Fe-NAND通过设计单元堆叠层进行优化，将程序/擦除(PE)窗口扩大到10.5 V。QLC运行成功，最小间隙裕度为0.24 V。耐久性和数据保留特性也被报道。

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QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering

3D ferroelectric NAND (Fe-NAND) Quad-level cell (QLC) operation has been demonstrated for the first time to our knowledge, using the 3D CTN NAND test vehicle for mass production. The 3D Fe-NAND is optimized by engineering the cell stack layers, enlarging a program/erase (PE) window up to 10.5 V. QLC operation is successfully verified with the minimum gap margin of 0.24 V. Endurance and data retention characteristics are also reported.

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2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

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