量子阱到量子点隧穿的解析模型

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003. Pub Date : 2003-09-16 DOI:10.1109/ESSDERC.2003.1256913

R. Clerc, G. Ghibaudo, G. Pananakakis

{"title":"量子阱到量子点隧穿的解析模型","authors":"R. Clerc, G. Ghibaudo, G. Pananakakis","doi":"10.1109/ESSDERC.2003.1256913","DOIUrl":null,"url":null,"abstract":"This paper presents an analytical model of elastic tunneling from a quantum well to a quantum dot, applicable to the modeling of single electron transistor and memory charging. The main differences between tunneling to a quantum dot and to a continuum of states have been carefully addressed. The impact of quantum decoherence factors such as temperature and dot size dispersion have also been investigated.","PeriodicalId":350452,"journal":{"name":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Analytical model for quantum well to quantum dot tunneling\",\"authors\":\"R. Clerc, G. Ghibaudo, G. Pananakakis\",\"doi\":\"10.1109/ESSDERC.2003.1256913\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an analytical model of elastic tunneling from a quantum well to a quantum dot, applicable to the modeling of single electron transistor and memory charging. The main differences between tunneling to a quantum dot and to a continuum of states have been carefully addressed. The impact of quantum decoherence factors such as temperature and dot size dispersion have also been investigated.\",\"PeriodicalId\":350452,\"journal\":{\"name\":\"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2003.1256913\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2003.1256913","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文提出了一个量子阱到量子点弹性隧穿的解析模型，适用于单电子晶体管和存储器充电的建模。隧穿到量子点和连续态之间的主要区别已经被仔细地讨论过。研究了温度和点尺寸色散等量子退相干因素的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Analytical model for quantum well to quantum dot tunneling

This paper presents an analytical model of elastic tunneling from a quantum well to a quantum dot, applicable to the modeling of single electron transistor and memory charging. The main differences between tunneling to a quantum dot and to a continuum of states have been carefully addressed. The impact of quantum decoherence factors such as temperature and dot size dispersion have also been investigated.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.

自引率

0.00%

发文量