{"title":"28nm FDSOI内嵌MOSFET，具有更好的击穿特性","authors":"N. K. Kranthi, R. Sithanandam, R. Komaragiri","doi":"10.1109/VLSID.2015.54","DOIUrl":null,"url":null,"abstract":"In this work, a novel recessed structure is proposed which improves the electric field distributions at the drain channel junction, hence the breakdown voltage. Technology computer aided design simulation results showed that the off state breakdown voltage of a 28 nm Fully Depleted Silicon on Insulator MOSFET is extended from 1.8V to 3.3 V or more. A detailed study is presented on the breakdown and DC characteristics of the same device. An asymmetric version of the same is also studied to further enhance the breakdown voltage and DC characteristics with and without Ground Plane (GP).","PeriodicalId":123635,"journal":{"name":"2015 28th International Conference on VLSI Design","volume":"292 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Recessed MOSFET in 28 nm FDSOI for Better Breakdown Characteristics\",\"authors\":\"N. K. Kranthi, R. Sithanandam, R. Komaragiri\",\"doi\":\"10.1109/VLSID.2015.54\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, a novel recessed structure is proposed which improves the electric field distributions at the drain channel junction, hence the breakdown voltage. Technology computer aided design simulation results showed that the off state breakdown voltage of a 28 nm Fully Depleted Silicon on Insulator MOSFET is extended from 1.8V to 3.3 V or more. A detailed study is presented on the breakdown and DC characteristics of the same device. An asymmetric version of the same is also studied to further enhance the breakdown voltage and DC characteristics with and without Ground Plane (GP).\",\"PeriodicalId\":123635,\"journal\":{\"name\":\"2015 28th International Conference on VLSI Design\",\"volume\":\"292 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-02-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 28th International Conference on VLSI Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSID.2015.54\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 28th International Conference on VLSI Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSID.2015.54","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Recessed MOSFET in 28 nm FDSOI for Better Breakdown Characteristics
In this work, a novel recessed structure is proposed which improves the electric field distributions at the drain channel junction, hence the breakdown voltage. Technology computer aided design simulation results showed that the off state breakdown voltage of a 28 nm Fully Depleted Silicon on Insulator MOSFET is extended from 1.8V to 3.3 V or more. A detailed study is presented on the breakdown and DC characteristics of the same device. An asymmetric version of the same is also studied to further enhance the breakdown voltage and DC characteristics with and without Ground Plane (GP).
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