{"title":"245mhz石墨烯-氮化铝纳米板谐振器","authors":"Z. Qian, Y. Hui, F. Liu, S. Kar, M. Rinaldi","doi":"10.1109/TRANSDUCERS.2013.6627190","DOIUrl":null,"url":null,"abstract":"This paper reports on the first demonstration of a high frequency (245 MHz) Graphene-Aluminum Nitride (G-AlN) nano plate resonator (NPR). For the first time, a two-dimensional (2D) electrically conductive graphene layer was integrated on top of an ultra-thin (500 nm) AlN nano plate and excited into a high frequency contour-extensional mode of vibration by piezoelectric transduction. Despite the reduced mass (~43%) and volume (~16%) and the increased sound velocity, hence resonant frequency (~23%), of the G-AlN NPR, unchanged device figure of merit (kt2·Q≈18) compared to the conventional AlN NPR was recorded, which demonstrates the great potential of the proposed technology for the implementation of a new class of ultra-sensitive and low noise G-AlN resonant sensors.","PeriodicalId":202479,"journal":{"name":"2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)","volume":"277 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"245 MHz graphene-aluminum nitride nano plate resonator\",\"authors\":\"Z. Qian, Y. Hui, F. Liu, S. Kar, M. Rinaldi\",\"doi\":\"10.1109/TRANSDUCERS.2013.6627190\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports on the first demonstration of a high frequency (245 MHz) Graphene-Aluminum Nitride (G-AlN) nano plate resonator (NPR). For the first time, a two-dimensional (2D) electrically conductive graphene layer was integrated on top of an ultra-thin (500 nm) AlN nano plate and excited into a high frequency contour-extensional mode of vibration by piezoelectric transduction. Despite the reduced mass (~43%) and volume (~16%) and the increased sound velocity, hence resonant frequency (~23%), of the G-AlN NPR, unchanged device figure of merit (kt2·Q≈18) compared to the conventional AlN NPR was recorded, which demonstrates the great potential of the proposed technology for the implementation of a new class of ultra-sensitive and low noise G-AlN resonant sensors.\",\"PeriodicalId\":202479,\"journal\":{\"name\":\"2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)\",\"volume\":\"277 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TRANSDUCERS.2013.6627190\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TRANSDUCERS.2013.6627190","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper reports on the first demonstration of a high frequency (245 MHz) Graphene-Aluminum Nitride (G-AlN) nano plate resonator (NPR). For the first time, a two-dimensional (2D) electrically conductive graphene layer was integrated on top of an ultra-thin (500 nm) AlN nano plate and excited into a high frequency contour-extensional mode of vibration by piezoelectric transduction. Despite the reduced mass (~43%) and volume (~16%) and the increased sound velocity, hence resonant frequency (~23%), of the G-AlN NPR, unchanged device figure of merit (kt2·Q≈18) compared to the conventional AlN NPR was recorded, which demonstrates the great potential of the proposed technology for the implementation of a new class of ultra-sensitive and low noise G-AlN resonant sensors.