实际工艺流程的整体3D

Z. Or-Bach
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引用次数: 3

摘要

本文介绍了三种获得单片三维逻辑集成电路的方法。RCAT -在层转移(LT)之前对通用结构进行高温处理,然后用冷加工完成;即,蚀刻和沉积。浇口更换(浇口最后一次HKMG) -在LT之前在重复结构上处理高温,并以“浇口更换”冷加工完成。激光退火-使用短激光脉冲局部加热和退火顶层,同时保护下面的互连层不受上层热量的影响。这些方法利用众所周知的和制造友好的材料,工艺步骤和设备结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Practical process flows for monolithic 3D
Three approaches to obtain monolithic 3D logic ICs are presented in this paper. RCAT - Process the high temperature on a generic structure prior to layer transfer (LT), and finish with cold processes; i.e., etch & depositions. Gate Replacement (Gate Last HKMG) - Process the high temperature on a repeating structure prior to LT, and finish with `gate replacement' cold processes. Laser Annealing - Use short laser pulses to locally heat and anneal the top layer while protecting the interconnection layers below from the topside heat. These approaches utilize well-known and manufacturing-friendly materials, process steps and device structures.
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