100mm直径In/sub 0.53/Ga/sub 0.47/As/InP晶圆加工进展

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773709

G. Olsen, M. Lange, A. Sugg, M. Ettenberg, J. Sudol, M. J. Cohen, S. Forrest

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引用次数: 0

摘要

介绍了在直径为50和75 mm的InP衬底上生长InGaAs/InP外延层的光电探测器阵列结果。晶格匹配材料的最佳并联电阻面积产品超过100,000欧姆-厘米/sup 2/。x射线形貌结果表明，在直径为100 mm的范围内，可以获得低缺陷密度(<10,000 cm/sup -2/)的掺铁InP衬底。低暗电流的结果也获得了一个“自旋”锌扩散技术，其中锌的来源是“自旋”很像光刻胶。

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Progress with 100 mm diameter In/sub 0.53/Ga/sub 0.47/As/InP wafer processing

Photodetector array results for InGaAs/InP epitaxial layers grown on 50 and 75 mm diameter InP substrates are presented. Best shunt-resistance area products for lattice-matched material exceed 100,000 ohm-cm/sup 2/. X-ray topography results indicate that low defect density (<10,000 cm/sup -2/) iron-doped InP substrates are available in 100 mm diameter. Low dark current results were also obtained with a a "spin-on" zinc diffusion technique whereby the source of zinc is "spun-on" much like a photoresist.

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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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