Guanghong Wang, Lei Zhao, Ruidan Hu, H. Diao, Wenjing Wang
{"title":"用发射光谱法提高非晶硅异质结太阳能电池的表面钝化能力","authors":"Guanghong Wang, Lei Zhao, Ruidan Hu, H. Diao, Wenjing Wang","doi":"10.1109/PVSC.2015.7356302","DOIUrl":null,"url":null,"abstract":"The intrinsic a-Si:H thin film is the key to the high efficiency heterojunction silicon solar cells. The transient instability after plasma ignition decreases the minority carrier lifetime of passivated silicon wafer at the same deposition process. The capability to passivate the silicon surface of a-Si:H thin films deposited at different hydrogen flow rate is investigated. The results show the passivation capability at higher hydrogen flow rate is poorer. The decrease of Hα*, Hβ* and SiH* emission intensity in plasma is not easier to passivate the silicon surface.","PeriodicalId":427842,"journal":{"name":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Improving surface passivation capability of silicon heterojunction solar cells with amorphous silicon by optical emission spectrometry\",\"authors\":\"Guanghong Wang, Lei Zhao, Ruidan Hu, H. Diao, Wenjing Wang\",\"doi\":\"10.1109/PVSC.2015.7356302\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The intrinsic a-Si:H thin film is the key to the high efficiency heterojunction silicon solar cells. The transient instability after plasma ignition decreases the minority carrier lifetime of passivated silicon wafer at the same deposition process. The capability to passivate the silicon surface of a-Si:H thin films deposited at different hydrogen flow rate is investigated. The results show the passivation capability at higher hydrogen flow rate is poorer. The decrease of Hα*, Hβ* and SiH* emission intensity in plasma is not easier to passivate the silicon surface.\",\"PeriodicalId\":427842,\"journal\":{\"name\":\"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2015.7356302\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2015.7356302","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improving surface passivation capability of silicon heterojunction solar cells with amorphous silicon by optical emission spectrometry
The intrinsic a-Si:H thin film is the key to the high efficiency heterojunction silicon solar cells. The transient instability after plasma ignition decreases the minority carrier lifetime of passivated silicon wafer at the same deposition process. The capability to passivate the silicon surface of a-Si:H thin films deposited at different hydrogen flow rate is investigated. The results show the passivation capability at higher hydrogen flow rate is poorer. The decrease of Hα*, Hβ* and SiH* emission intensity in plasma is not easier to passivate the silicon surface.