Al/sub -x/ Ga/sub - 1-x/N场发射化学计量特征的理论探讨

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI:10.1109/IVESC.2004.1414225

T. S. Choi, M. Chung

{"title":"Al/sub -x/ Ga/sub - 1-x/N场发射化学计量特征的理论探讨","authors":"T. S. Choi, M. Chung","doi":"10.1109/IVESC.2004.1414225","DOIUrl":null,"url":null,"abstract":"The field emission current density j from the ternary alloy Al/sub x/Ga/sub 1-x/N is calculated as a function of a stoichiometric composition x for 0/spl les/x/spl les/1. In addition to the doping, the internal field emission is considered to contribute to the carrier concentration n of the conduction band of Al/sub x/Ga/sub 1-x/N. A full calculation is made to obtain the exact j from Al/sub x/Ga/sub 1-x/N as a function of x and the field F. Then we found the stoichiometric dependence of field emission from Al/sub x/Ga/sub 1-x/N by analyzing the effects of both the electron affinity and the carrier concentration.","PeriodicalId":340787,"journal":{"name":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Theoretical approach to the stoichiometric feature of field emission from Al/sub x/Ga/sub 1-x/N\",\"authors\":\"T. S. Choi, M. Chung\",\"doi\":\"10.1109/IVESC.2004.1414225\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The field emission current density j from the ternary alloy Al/sub x/Ga/sub 1-x/N is calculated as a function of a stoichiometric composition x for 0/spl les/x/spl les/1. In addition to the doping, the internal field emission is considered to contribute to the carrier concentration n of the conduction band of Al/sub x/Ga/sub 1-x/N. A full calculation is made to obtain the exact j from Al/sub x/Ga/sub 1-x/N as a function of x and the field F. Then we found the stoichiometric dependence of field emission from Al/sub x/Ga/sub 1-x/N by analyzing the effects of both the electron affinity and the carrier concentration.\",\"PeriodicalId\":340787,\"journal\":{\"name\":\"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)\",\"volume\":\"93 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVESC.2004.1414225\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVESC.2004.1414225","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

计算了三元合金Al/sub x/Ga/sub 1-x/N在0/spl les/x/spl les/1时的场发射电流密度j作为化学计量成分x的函数。除掺杂外，内场发射被认为对Al/sub x/Ga/sub 1-x/ n导带载流子浓度n有贡献。通过对Al/sub x/Ga/sub - 1-x/N的场发射的化学计量学分析，得到了Al/sub x/Ga/sub - 1-x/N的场发射随x和场f的变化规律。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Theoretical approach to the stoichiometric feature of field emission from Al/sub x/Ga/sub 1-x/N

The field emission current density j from the ternary alloy Al/sub x/Ga/sub 1-x/N is calculated as a function of a stoichiometric composition x for 0/spl les/x/spl les/1. In addition to the doping, the internal field emission is considered to contribute to the carrier concentration n of the conduction band of Al/sub x/Ga/sub 1-x/N. A full calculation is made to obtain the exact j from Al/sub x/Ga/sub 1-x/N as a function of x and the field F. Then we found the stoichiometric dependence of field emission from Al/sub x/Ga/sub 1-x/N by analyzing the effects of both the electron affinity and the carrier concentration.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)

自引率

0.00%

发文量