SOI四栅极晶体管的表面与体噪声

2005 IEEE International SOI Conference Proceedings Pub Date : 2005-12-27 DOI:10.1109/SOI.2005.1563574

K. Akarvardar, B. Dufrene, S. Cristoloveanu, J. Chroboczek, P. Gentil, B. Blalock, M. Mojarradi

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引用次数: 0

摘要

分析了四栅极晶体管(G/sup 4/- fet)在表面导通(MOSFET模式)和体积导通(JFET模式)下的低频噪声特性。当传导通道从表面移动到体时，我们观察到:(1)噪声水平显著降低;(ii)噪音的性质改变。讨论了现有噪声模型在不同传导模式下的有效性。

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Surface vs. bulk noise in SOI four-gate transistors

Low-frequency noise characteristics of four-gate transistors (G/sup 4/-FETs) are presented distinguishing the surface conduction (MOSFET mode) and volume conduction (JFET mode). As the conducting channel moves from the surface to the bulk we observe that: (i) the noise level dramatically decreases; and (ii) the nature of the noise changes. The validity of the existing noise models for different conduction modes is discussed.

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2005 IEEE International SOI Conference Proceedings

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