{"title":"亚纳秒级ESD器件反向恢复测量","authors":"A. Ayling, Shudong Huang, E. Rosenbaum","doi":"10.1109/IRPS45951.2020.9129596","DOIUrl":null,"url":null,"abstract":"A method to measure sub-nanosecond reverse recovery in wafer-level test structures is presented. The setup uses a transmission line pulse generator with a time-domain through connection to measure the device-under-test current. The setup is used to measure reverse recovery in a 65-nm CMOS ESD diode, and it is found that a quasi-static compact model does not accurately describe the observed transient. A non-quasi-static charge control model is used to accurately simulate both the reverse recovery and the forward bias behavior.","PeriodicalId":116002,"journal":{"name":"2020 IEEE International Reliability Physics Symposium (IRPS)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Sub-nanosecond Reverse Recovery Measurement for ESD Devices\",\"authors\":\"A. Ayling, Shudong Huang, E. Rosenbaum\",\"doi\":\"10.1109/IRPS45951.2020.9129596\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A method to measure sub-nanosecond reverse recovery in wafer-level test structures is presented. The setup uses a transmission line pulse generator with a time-domain through connection to measure the device-under-test current. The setup is used to measure reverse recovery in a 65-nm CMOS ESD diode, and it is found that a quasi-static compact model does not accurately describe the observed transient. A non-quasi-static charge control model is used to accurately simulate both the reverse recovery and the forward bias behavior.\",\"PeriodicalId\":116002,\"journal\":{\"name\":\"2020 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS45951.2020.9129596\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS45951.2020.9129596","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Sub-nanosecond Reverse Recovery Measurement for ESD Devices
A method to measure sub-nanosecond reverse recovery in wafer-level test structures is presented. The setup uses a transmission line pulse generator with a time-domain through connection to measure the device-under-test current. The setup is used to measure reverse recovery in a 65-nm CMOS ESD diode, and it is found that a quasi-static compact model does not accurately describe the observed transient. A non-quasi-static charge control model is used to accurately simulate both the reverse recovery and the forward bias behavior.
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