降低电流控制单相逆变器的开关损耗

C. Vázquez, M. Lafoz, L. García-Tabarés, D. Ugena, F. Toral, E. Rodríguez, S. Sanz, I. Rodríguez, D. Carrillo
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引用次数: 3

摘要

本文介绍了一种在电流控制单相逆变器中降低半导体开关损耗并使其均匀分布的有效技术。采用从多电平变换器研究中引入的双滞后带电流控制策略,利用三电平换流降低了电流开关频率。此外,通过修改用于平衡上下器件之间功耗的标准半导体开关模式来实现半导体开关频率的额外降低。通过这种方式,开关损耗总体降低2到4倍。详细介绍了系统控制策略,并给出了一个200 kVA开关磁阻驱动的电网侧变换器的实验结果,以更好地展示所涉及的概念。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Switching losses reduction in current-controlled single-phase inverters
This paper introduces an effective technique for reducing semiconductor switching losses, and evenly distributing them, in current-controlled single-phase inverters. The current switching frequency is reduced taking advantage of three-level commutation by a double hysteresis-band current-control strategy imported from multilevel converters studies. Furthermore, an additional reduction of the semiconductor switching frequency is accomplished by modifying the standard semiconductor switching pattern for balancing power dissipation between upper and lower devices. An overall reduction of switching losses in a factor of 2 to 4 is achieved in this manner. The system control strategies are exposed in detail and experimental results for a 200 kVA grid-side converter of a switched reluctance drive are presented to better show the concepts involved.
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