半导体材料的原子结构顺序分类

A. Popov, I. Miroshnikova
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引用次数: 0

摘要

固态电子学的发展与集成电路元件有源区尺寸的减小有着密不可分的联系。这种活动区域大小的减小可能导致边界上的平移对称性的破坏。这就是为什么理解有序区域的大小及其原子结构的有序程度和半导体材料的性质之间的关系变得迫切。本文提出了一种根据有序区域大小对半导体材料进行分类的方法。值得注意的是,该参数影响材料的能带结构,电荷载流子的局部化程度,从而影响半导体的电物理性质。此外,原子结构的有序程度的变化会影响控制材料性能的方法的有效性。特别注意的是纳米有序系统。分析了初始晶态、玻璃态和非晶态的相变特征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Classification of Semiconductor Materials by Their Atomic Structure Order
Development of solid-state electronics is inextricably linked with decreasing size of active regions of integrated circuits elements. This reduction in the size of active regions leads to possible violations of translational symmetry at their boundaries. This is why understanding the relationship between the sizes of ordered regions and the degree of ordering of their atomic structure and the properties of semiconductor material becomes urgent. This paper proposes a classification of semiconductor materials according to the size of ordered regions. It is noted that this parameter affects the band structure of the material, the degree of localization of charge carriers and, consequently, the electrophysical properties of the semiconductor. Moreover, a change in the degree of ordering of the atomic structure affects the effectiveness of methods for controlling material properties. Particular attention is paid to nano-ordered systems. The features of phase transitions from the initial crystalline, glassy, and amorphous states are analyzed.
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