{"title":"SiGe BiCMOS x波段集成辐射计","authors":"F. Ducati, A. Mazzanti, M. Borgarino, M. Pifferi","doi":"10.1109/ICECS.2008.4675088","DOIUrl":null,"url":null,"abstract":"The present paper reports on the design in a 0.35. mum SiGe BiCMOS technology, fabrication, and test of a monolithic RF front-end useful for the fabrication of a miniaturized, low cost X-band radiometer. The obtained prototype occupies a silicon area lower than 5 mm2, dissipated about 0.5 W, and is able to detect a signal as low as -90 dBm up to 10 GHz.","PeriodicalId":404629,"journal":{"name":"2008 15th IEEE International Conference on Electronics, Circuits and Systems","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"SiGe BiCMOS X-Band integrated radiometer\",\"authors\":\"F. Ducati, A. Mazzanti, M. Borgarino, M. Pifferi\",\"doi\":\"10.1109/ICECS.2008.4675088\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The present paper reports on the design in a 0.35. mum SiGe BiCMOS technology, fabrication, and test of a monolithic RF front-end useful for the fabrication of a miniaturized, low cost X-band radiometer. The obtained prototype occupies a silicon area lower than 5 mm2, dissipated about 0.5 W, and is able to detect a signal as low as -90 dBm up to 10 GHz.\",\"PeriodicalId\":404629,\"journal\":{\"name\":\"2008 15th IEEE International Conference on Electronics, Circuits and Systems\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 15th IEEE International Conference on Electronics, Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS.2008.4675088\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 15th IEEE International Conference on Electronics, Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2008.4675088","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The present paper reports on the design in a 0.35. mum SiGe BiCMOS technology, fabrication, and test of a monolithic RF front-end useful for the fabrication of a miniaturized, low cost X-band radiometer. The obtained prototype occupies a silicon area lower than 5 mm2, dissipated about 0.5 W, and is able to detect a signal as low as -90 dBm up to 10 GHz.
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