单晶金刚石肖特基势垒二极管的数值与实验分析

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1488014

S. J. Rashid, L. Coulbeck, A. Tajani, M. Brezeanu, A. Garraway, T. Butler, N. Rupesinghe, D. Twitchen, G. Amaratunga, Florin Udrea, P. Taylor, M. Dixon, Jan Isberg

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引用次数: 7

摘要

本文介绍了本征单晶(SC)化学气相沉积(CVD)金刚石层生长在高硼掺杂衬底上的肖特基势垒二极管(sbd)的数值和实验分析结果。通过结合先前报道的输运物理和载流子活化数据的数值模拟，实现了与实验结果的良好相关性。通过我们的数值模型，对于两种不同的肖特基金属，我们能够在12到15%的范围内匹配制造的金刚石sdd的测量正向特性，最高超过导通电压2 V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Numerical and Experimental Analysis of Single Crystal Diamond Schottky Barrier Diodes

We present our findings on the numerical and experimental analysis of diamond Schottky Barrier diodes (SBDs) comprising of intrinsic single crystal (SC) chemical vapour deposited (CVD) diamond layers grown on highly boron doped substrates also grown by CVD. Good correlation with experimental results has been achieved through numerical modelling that has incorporated previously reported data on transport physics and carrier activation. With our numerical model, we are able to match to within 12 to 15% of the measured forward characteristics of fabricated diamond SBDs up to 2 V in excess of the turn on voltage, for two different Schottky metals.

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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