增强高压直流晶闸管坚固性的局部寿命控制

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-13 DOI:10.1109/ISPSD.2018.8393626

J. Vobecký, V. Boţan, K. Meier, K. Tugan, M. Bellini

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引用次数: 5

摘要

实验证明，质子辐照可以提高高压直流大面积晶闸管的坚固性。在7.2和8.5 kV等级(IT = 6.25 kA, T = 90°C)下，在VT低于1.7 V和1.8 V时保持非常低的导通状态损耗的同时，在150 mm硅片上实现了创纪录的低泄漏电流，同时增加了浪涌电流，更高的dV/dt能力和更低的电路换流恢复时间tq。

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Local lifetime control for enhanced ruggedness of HVDC thyristors

Proton irradiation is experimentally demonstrated to increase the ruggedness of large area thyristors for HVDC. While maintaining very low On-state losses at VT below 1.7 V and 1.8 V for 7.2 and 8.5 kV classes (IT = 6.25 kA, T = 90 °C), record low leakage current has been achieved at 150 mm silicon wafers together with increased surge current, higher dV/dt capability and lower circuit commutated recovery time tq.

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来源期刊

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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