基于球次谐波展开的自相容Si和SiO2 BTE溶液在mosfet中的电子注入

30th European Solid-State Device Research Conference Pub Date : 2000-09-11 DOI:10.1109/ESSDERC.2000.194850

M. Marsella, S. Reggiani, A. Gnudi, M. Rudan

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摘要

将基于球次谐波展开的玻尔兹曼输运方程(BTE)的求解方法应用于Si-SiO2结构中的输运问题。基于热离子理论，提出了一种计算两种材料界面处微观通量的新模型。二维MOSFET的仿真结果验证了该模型。

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Electron injection in MOSFETs with a self-consistent Si and SiO2 BTE solution based on spherical-harmonics expansion

The solution method for the Boltzmann Transport Equation (BTE) based on the spherical-harmonics expansion (SHE) has been applied to the transport problem in a Si-SiO2 structure. A new model has been introduced to calculate the microscopic fluxes at the interface between the two materials, based on the thermionic theory. Results of a 2D MOSFET simulation are shown to validate the model.

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30th European Solid-State Device Research Conference

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