SOI CMOS中具有58%调谐范围的低压多ghz压控振荡器

Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285) Pub Date : 2002-08-07 DOI:10.1109/CICC.2002.1012862

N. Fong, J. Plouchart, N. Zamdmer, Duixian Liu, L. Wagner, C. Plett, Gerry Tarr

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引用次数: 23

摘要

采用0.13 /spl mu/m SOI CMOS工艺设计并制作了3.0-5.6 GHz低压压控振荡器。该压控振荡器具有单回路马蹄形电感和一组带开关累加MOS (AMOS)变容管。这导致了良好的相位噪声和58.7%的宽调谐范围，当调谐在0到1.4 V之间。在1v电源(V/sub DD/)和1mhz偏移时，3.0 GHz时相位噪声为- 120dbc /Hz, 5.6 GHz时相位噪声为-114.5 dBc/Hz。整个调谐范围的功耗在2到3 mW之间。缓冲输出功率为- 7dbm。当VDD降低到0.83 V时，VCO在5.6 GHz时的功耗小于1mw。

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A low-voltage multi-GHz VCO with 58% tuning range in SOI CMOS

A low-voltage 3.0-5.6 GHz VCO was designed and fabricated in an 0.13 /spl mu/m SOI CMOS process. This VCO features a single-loop horseshoe-shaped inductor and an array of band-switching accumulation MOS (AMOS) varactors. This results in good phase noise and a wide tuning range of 58.7% when tuned between 0 to 1.4 V. At a 1 V Supply (V/sub DD/) and 1 MHz offset, the phase noise is -120 dBc/Hz at 3.0 GHz, and -114.5 dBc/Hz at 5.6 GHz. The power dissipation is between 2 and 3 mW across the whole tuning range. The buffered output power is -7 dBm. When VDD is reduced to 0.83 V, the VCO dissipates less than 1 mW at 5.6 GHz.

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Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)

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