{"title":"用于单片光接收器的GaAs/GaAlAs异质结双极光电晶体管，工作速度为140 Mbit/s","authors":"H. Wang, C. Bacot, C. Chevalier, D. Ankri","doi":"10.1109/MWSYM.1986.1132290","DOIUrl":null,"url":null,"abstract":"The first monolithic integrated photodetector-preamplifier implemented with GaAs-GaAIAs heterojunction phototransistor and transistors has been fabricated and tested. A heterojunction phototransistor (HPT), two heterojunction bipolar transistors (HBT's) and four resistors are integrated in a 0.5 x 0.5 mm/sup 2/ GaAs chip. The photoreceiver with a 26 kOmega external feedback resistor has a bandwidth of 80 MHz with a transimpedance gain of 7000V/A. The noise measurements indicate that a minimum detectable power of -30 dBm is obtained at 140 Mbit/s for an error rate of 10/sup -9/.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"GaAs/GaAlAs Heterojunction Bipolar Phototransistor for Monolithic Photoreceiver Operating at 140 Mbit/s\",\"authors\":\"H. Wang, C. Bacot, C. Chevalier, D. Ankri\",\"doi\":\"10.1109/MWSYM.1986.1132290\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The first monolithic integrated photodetector-preamplifier implemented with GaAs-GaAIAs heterojunction phototransistor and transistors has been fabricated and tested. A heterojunction phototransistor (HPT), two heterojunction bipolar transistors (HBT's) and four resistors are integrated in a 0.5 x 0.5 mm/sup 2/ GaAs chip. The photoreceiver with a 26 kOmega external feedback resistor has a bandwidth of 80 MHz with a transimpedance gain of 7000V/A. The noise measurements indicate that a minimum detectable power of -30 dBm is obtained at 140 Mbit/s for an error rate of 10/sup -9/.\",\"PeriodicalId\":109161,\"journal\":{\"name\":\"1986 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1986.1132290\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1986.1132290","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaAs/GaAlAs Heterojunction Bipolar Phototransistor for Monolithic Photoreceiver Operating at 140 Mbit/s
The first monolithic integrated photodetector-preamplifier implemented with GaAs-GaAIAs heterojunction phototransistor and transistors has been fabricated and tested. A heterojunction phototransistor (HPT), two heterojunction bipolar transistors (HBT's) and four resistors are integrated in a 0.5 x 0.5 mm/sup 2/ GaAs chip. The photoreceiver with a 26 kOmega external feedback resistor has a bandwidth of 80 MHz with a transimpedance gain of 7000V/A. The noise measurements indicate that a minimum detectable power of -30 dBm is obtained at 140 Mbit/s for an error rate of 10/sup -9/.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
