基于高频工作GaN fbar的压力传感器

2015 International Semiconductor Conference (CAS) Pub Date : 2015-12-17 DOI:10.1109/SMICND.2015.7355174

I. Giangu, G. Stavrinidis, A. Stefanescu, A. Stavrinidis, A. Dinescu, G. Konstantinidis, A. Muller

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引用次数: 1

摘要

本文首先介绍了基于GaN的FBAR(薄膜体声谐振器)结构作为压力传感器的表征实验。FBAR结构是利用先进的微加工技术在GaN/Si上制造的。实验证明了0.5 μm薄的GaN膜具有优异的力学性能，能够承受至少5 Bar的压力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Pressure sensors based on high frequency operating GaN FBARs

In this paper, first experiments regarding characterization of the GaN based FBAR (Film Bulk Acoustic Resonator) structures as pressure sensors are presented. The FBAR structures have been manufactured on GaN/Si using advanced micromachining technologies. The experiments have demonstrated the excellent mechanical properties of 0.5 μm thin GaN membranes able to support a pressure of at least 5 Bar.

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2015 International Semiconductor Conference (CAS)

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