T. N. Nguyen, Seong-Gwon Lee, Sang-Hyun Hwang, Jong‐Wook Lee, Byung-sung Kim
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Millimeter-wave CMOS circuits for a high data rate wireless transceiver
This paper presents millimeter-wave CMOS building blocks for a high date rate wireless transceiver. The results include measured data for a 40–50 GHz broad-band low noise amplifier, a 40 GHz tuned power amplifier, and an 18 GHz voltage controlled oscillator. Also, simulation results for a 22 GHz multi-modulus prescaler is presented for implementing phase locked loop. The circuits were fabricated 0.13 µ m CMOS process. The measured results showed good agreement with simulation data demonstrating good modeling accuracy of CMOS active and passive devices for millimeter-wave applications.
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