辐射下纳米控制器的表征

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858653

F. Bezerra, S. Barde, J. Carayon, M. Sarthou

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引用次数: 2

摘要

在MICROSAT和ROSETTA项目的框架内，CNES(法国国家机构)对4种纳米控制器在重离子、质子和总剂量下的行为进行了表征。这些产品经常用于工业和商业应用。它们被选择用于ROSETTA (s波段发射机/接收机和TM/TC)和MICROSAT (OBC和有效载荷管理单元)，原因如下:易于使用，大量I/ o;12C链路、USART、定时器、ADC、内部RAM和PROM;低功耗(5v时几毫安);低质量和尺寸(soic28)。这项工作的目的是在整个市场报价中确定MICROSAT应用的最佳候选产品。

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Nanocontrollers characterization under radiation

Within the framework of the MICROSAT and ROSETTA projects, CNES (French National Agency) has characterized the behavior of 4 nanocontrollers under heavy ions, protons and total dose. These products are frequently used in industrial and commercial applications. They have been chosen for ROSETTA (S-band transmitter/receiver and TM/TC) and MICROSAT (OBC and payload management unit) for the following reasons : easy use, numerous I/Os; 12C link, USART, timer, ADC, internal RAM and PROM; low consumption (a few mA at 5 V); and low mass and dimension (SOIC 28). The aim of this work was to determine the best candidate for MICROSAT application within the whole market offer.

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1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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