5ghz低功率rtd放大器MMIC，具有24.5 dB/mW的高品质系数

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562608

Jongwon Lee, Jooseok Lee, Jaehong Park, Kyounghoon Yang

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引用次数: 5

摘要

提出了一种采用混合耦合反射型拓扑结构的低直流功率RTD微波放大器。该低功率微波放大器由一个正交混合耦合器和两个rtd组成，采用基于inp的MMIC技术实现。所制备的RTD放大器在5 GHz时具有470w的低直流功耗和11.5 dB的高增益，从而获得24.5 dB/mW的高FOM。该放大器集成电路是基于RTD器件技术的低功率微波放大器的首次演示。

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5 GHz low-power RTD-based amplifier MMIC with a high figure-of-merit of 24.5 dB/mW

A low dc power RTD microwave amplifier utilizing a hybrid-coupled reflection-type topology is presented. The low-power microwave amplifier, which consists of a quadrature hybrid coupler and two RTDs, is implemented using an InP-based MMIC technology. The fabricated RTD amplifier shows low dc power consumption of 470 W with high gain of 11.5 dB at 5 GHz, resulting in high FOM of 24.5 dB/mW. The amplifier IC is the first demonstration of a low-power microwave amplifier based on the RTD device technology.

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2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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