5ghz低功率rtd放大器MMIC,具有24.5 dB/mW的高品质系数

Jongwon Lee, Jooseok Lee, Jaehong Park, Kyounghoon Yang
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引用次数: 5

摘要

提出了一种采用混合耦合反射型拓扑结构的低直流功率RTD微波放大器。该低功率微波放大器由一个正交混合耦合器和两个rtd组成,采用基于inp的MMIC技术实现。所制备的RTD放大器在5 GHz时具有470w的低直流功耗和11.5 dB的高增益,从而获得24.5 dB/mW的高FOM。该放大器集成电路是基于RTD器件技术的低功率微波放大器的首次演示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
5 GHz low-power RTD-based amplifier MMIC with a high figure-of-merit of 24.5 dB/mW
A low dc power RTD microwave amplifier utilizing a hybrid-coupled reflection-type topology is presented. The low-power microwave amplifier, which consists of a quadrature hybrid coupler and two RTDs, is implemented using an InP-based MMIC technology. The fabricated RTD amplifier shows low dc power consumption of 470 W with high gain of 11.5 dB at 5 GHz, resulting in high FOM of 24.5 dB/mW. The amplifier IC is the first demonstration of a low-power microwave amplifier based on the RTD device technology.
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