Physical and circuit modeling of HfO2 based ferroelectric memories and devices

The discovery of ferroelectric properties in polycrystalline HfO2 has revived the interest in ferroelectric (FE) memories, which shows scaling feasibility allowing targeting high-density storage applications. In order to provide engineering guidelines for FE memory devices it is crucial to establish a correlation between the electrical device performances and the underlying physical mechanisms. In this work, we will discuss physical and circuit modeling approaches for FE memories connecting the FE HfO2 materials properties to the electrical performances of memory cells, artificial synapse for neuromorphic and in memory computing applications.