高阻衬底SiGe HBT的SPICE模型及其放大器设计

2007 International Conference on Microwave and Millimeter Wave Technology Pub Date : 2007-04-18 DOI:10.1109/ICMMT.2007.381427

Yang Wei-ming, Chen Jian-xin, Shi Chen, Liu Su-juan

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引用次数: 0

摘要

提取了高电阻率衬底SiGe HBT的SPICE模型参数。实测数据和仿真数据的对比结果验证了该模型适用于SiGe HBT直流和交流小信号表征。利用这些提取的SPICE参数，在聚四氟乙烯衬底PCB上设计并实现了一个两级直接耦合放大器。模拟结果与试验结果接近。

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SPICE Model of SiGe HBT with High Resistivity Substrate and its Amplifier Design

The SPICE model parameters of SiGe HBT with high resistivity substrate is extracted. Compared results between measured and simulated data verify that this model is suitable for SiGe HBT DC and AC small-signal characterizations' representation. Using these extracted SPICE parameters, a two-stage direct-coupled amplifier has been designed and implemented on a Teflon substrate PCB. The simulated results are closed to that of test.

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2007 International Conference on Microwave and Millimeter Wave Technology

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