2D molybdenum disulfide (MoS2) transistors driving RRAMs with 1T1R configuration

We demonstrate the first 1-transistor-1-resistor (1T1R) memory cell using the atomically thin molybdenum disulfide (MoS2) field-effect transistor (FET) and resistive random access memory (RRAM). This 1T1R demonstration realizes a key milestone for tight integration of memory with logic in a monolithic 3D integrated chip. The monolayer MoS2 is grown by chemical vapor deposition (CVD), suitable for wafer-scale fabrication. The MoS2 FETs have ON-state current of 190 μA/μm at Vd = 2.5 V, showing strong driving capability for RRAM. Metal-oxide RRAMs are fabricated at low process temperature, compatible with MoS2 FET fabrication. 1T1R measurements show higher resistances, and less resistance and voltage variation compared with measurements using only the RRAM. The multiple resistance states obtained for pulsed reset measurements show promise for in-memory computing and neuromorphic computing applications.