带分段线性补偿的高精度带隙基准的设计

Lei Quan, Yongsheng Yin, X. Yang, Honghui Deng
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引用次数: 7

摘要

本文设计了一种分段线性补偿的高精度带隙基准。采用低电压布罗考BGR结构提供低输出电压。为了提高带隙基准电路的PSRR,设计了一种高增益、低电源抑制比(PSRR)运算放大器。为了实现明显低于传统带隙基准的温度稳定性,设计了一种在高温下产生正温度系数(TC)电流,在低温下产生0电流的电路。Spectre基于特许的0.18μm 1P5M 1.8V CMOS技术对整个BGR电路进行了仿真。仿真结果表明,在军用温度范围内,输出参考电压的TC接近2.61ppm/K,低频(f=0.1HZ)时PSRR达到107.2dB,整个BGR功耗为0.4mW。另外,当电源由1.5V变为2.1V时,输出参考电压仅变化8.6μV,即功率调节比为0.014mV/V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of a high precision band-gap reference with piecewise-linear compensation
A high precision band-gap reference (BGR) with piecewise-linear compensation is designed in this paper. A low voltage Brokaw BGR architecture is employed to provide low output voltage. A high gain, low power supply rejection ratio (PSRR) operational amplifier is designed to improve the PSRR of the band-gap reference. In order to achieve temperature stability significantly lower than the traditional band-gap reference, a circuit which produces a current with positive temperature coefficient (TC) at high temperatures and 0 current at lower temperatures is designed. The whole BGR circuits are simulated by Spectre based on chartered 0.18μm 1P5M 1.8V CMOS technology. It's clear from simulation result that the TC of the output reference voltage approaches 2.61ppm/K over the military temperature range, the PSRR reaches 107.2dB at low frequency (f=0.1HZ), the whole BGR dissipates 0.4mW. In addition, the output reference voltage changes only 8.6μV when the power supply changes from 1.5V to 2.1V, that is to say, the power regulation ratio is 0.014mV/V.
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