960mV开路电压黄铜矿太阳能电池

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Pub Date : 2015-10-08 DOI:10.1109/PVSC.2015.7355655

H. Hiroi, Y. Iwata, K. Horiguchi, S. Adachi, N. Sakai, H. Sugimoto

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引用次数: 6

摘要

用纯硫化物CuInGaS2太阳电池在黄铜矿太阳电池上实现了960mV的开路电压。一般来说，高性能的CuInGaS2需要经过kcn蚀刻处理来去除cu层，而我们可以不经过kcn蚀刻处理来制造它。此外，应用无cd缓冲层来提高电流密度，冠军电池的效率超过14%。本文将介绍高性能纯硫化物CuInGaS2电池的最新研究成果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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960mV open circuit voltage chalcopyrite solar cell

Open circuit voltage of 960mV on chalcopyrite solar cell was achieved by pure-sulfide CuInGaS2 solar cell. Generally, high performance CuInGaS2 needs KCN-etching treatment to remove CuS layer, however, we could fabricate it without KCN-etching treatment. Additionally, Cd-free buffer layer was applied for current density improvement and the champion cell demonstrated over 14% efficiency. In this paper, the latest results for high performance pure-sulfide CuInGaS2 cells will be presented.

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2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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