基于电容退化推推特性的60 ghz 0.13µm CMOS本振

2010 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2010-05-23 DOI:10.1109/RFIC.2010.5477283

T. Copani, Hyung-Seuk Kim, B. Bakkaloglu, S. Kiaei

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引用次数: 10

摘要

一个60 ghz 10mW CMOS压控振荡器与一个高速预缩放器在130nm CMOS工艺中实现。与其他推-推拓扑结构相比，电容退化技术不会影响谐振器，并且开关晶体管被重新用作缓冲器，最大限度地减少了由于后续放大器引起的噪声。在1MHz偏置时测量到的相位噪声为−89dBc/Hz, FoM为−174dBc/Hz。

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A 0.13-µm CMOS local oscillator for 60-GHz applications based on push-push characteristic of capacitive degeneration

A 60-GHz 10mW CMOS VCO is implemented together with a high-speed prescaler in a 130nm CMOS process. Compared to other push-push topologies, capacitive degeneration technique does not impact the resonator and switching transistors are re-used as buffers minimizing noise due to following amplifiers. The measured phase noise at 1MHz offset is −89dBc/Hz and FoM is −174dBc/Hz.

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2010 IEEE Radio Frequency Integrated Circuits Symposium

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