氮化氧栅介质增强P/sup +/-聚pmosfet的热孔降解

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) Pub Date : 1999-06-08 DOI:10.1109/VTSA.1999.786006

Y. Chen, M. Gardner, J. Fulford, D. Wristers, A. Joshi, L. Chung, D. Kwong

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引用次数: 5

摘要

采用氮化氧栅电介质的P/sup +/-聚pmosfet在热孔注入下有明显的退化。采用氮注入Si衬底(NISS)上生长的栅极氧化物形成的氮氧化合物和no退火的SiO/sub - 2/氮氧化物栅极电介质，并与相同厚度的SiO/sub - 2/栅极电介质进行比较。提出了一个物理模型，负责这种增强退化的pmosfet与氧化氮栅极电介质。结果表明，氮氧化物中SiO/ sub2 /Si界面处的富氮层降低了孔注入势垒，是导致这种降解增强的原因。

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Enhanced hot-hole degradation in P/sup +/-poly PMOSFETs with oxynitride gate dielectrics

A significant degradation under hot-hole injection is observed in P/sup +/-poly PMOSFETs with oxynitride gate dielectrics. Both oxynitrides formed by gate oxide grown on Nitrogen Implanted Si Substrates (NISS) and NO-annealed SiO/sub 2/ oxynitride gate dielectrics are used and compared to control SiO/sub 2/ gate dielectrics of identical thicknesses. A physical model responsible for such enhanced degradation in PMOSFETs with oxynitride gate dielectric is proposed. It is shown that the hole injection barrier lowering as a result of the nitrogen-rich layer at the SiO/sub 2//Si interface in oxynitride is responsible for such enhanced degradation.

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来源期刊

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)

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