采用激光退火和预非晶化注入的50 nm超浅结SOI CMOS晶体管

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) Pub Date : 2001-06-12 DOI:10.1109/VLSIT.2001.934951

Cheolmin Park, Seong-Dong Kim, Y. Wang, S. Talwar, J. Woo

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引用次数: 10

摘要

在SOI衬底上采用激光退火(LA)和预非晶化(PAI)相结合的方法制备了物理栅长为50 nm的CMOS晶体管。SOI衬底使极低能量激光退火成为可能，从而产生大的工艺窗口裕度，没有不良的寄生现象。与传统的快速热退火(RTA)器件相比，该方法制备的晶体管具有更高的驱动电流和更好的短通道效应。

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50 nm SOI CMOS transistors with ultra shallow junction using laser annealing and pre-amorphization implantation

CMOS transistors with 50 nm physical gate length are fabricated by laser annealing (LA) combined with pre-amorphization implantation (PAI) on an SOI substrate. Very low energy laser annealing is made possible by the SOI substrate, resulting in a large process window margin without undesirable parasitic phenomena. The transistors fabricated by the proposed method show higher drive current and better short channel effects than conventionally rapid thermal annealed (RTA) devices.

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来源期刊

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)

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