{"title":"采用低频信号注入法实现CMOS混频器线性化","authors":"C. Au-Yeung, K. Cheng","doi":"10.1109/MWSYM.2003.1210891","DOIUrl":null,"url":null,"abstract":"This paper presents, for the first time, the application of low-frequency signal injection technique to the linearization of a doubly balanced dual gate mixer. The down-conversion mixer is fabricated using 0.35 /spl mu/m CMOS technology and is designed to operate at 900 MHz RF input frequency with good port-to-port isolation, low LO power and current consumption. Reduction of third-order intermodulation distortion (IMD) level of almost 20 dB is achieved by the proposed scheme.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"CMOS mixer linearization by the low-frequency signal injection method\",\"authors\":\"C. Au-Yeung, K. Cheng\",\"doi\":\"10.1109/MWSYM.2003.1210891\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents, for the first time, the application of low-frequency signal injection technique to the linearization of a doubly balanced dual gate mixer. The down-conversion mixer is fabricated using 0.35 /spl mu/m CMOS technology and is designed to operate at 900 MHz RF input frequency with good port-to-port isolation, low LO power and current consumption. Reduction of third-order intermodulation distortion (IMD) level of almost 20 dB is achieved by the proposed scheme.\",\"PeriodicalId\":252251,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"volume\":\"72 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2003.1210891\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2003.1210891","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CMOS mixer linearization by the low-frequency signal injection method
This paper presents, for the first time, the application of low-frequency signal injection technique to the linearization of a doubly balanced dual gate mixer. The down-conversion mixer is fabricated using 0.35 /spl mu/m CMOS technology and is designed to operate at 900 MHz RF input frequency with good port-to-port isolation, low LO power and current consumption. Reduction of third-order intermodulation distortion (IMD) level of almost 20 dB is achieved by the proposed scheme.
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