利用硅载体表征高达40 GHz的倒装芯片微连接

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI:10.1109/IITC.2005.1499952

C. Patel, P. Andry, K. Jenkins, B. Dang, R. Horton, R. Polastre, C. Tsang

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引用次数: 2

摘要

本文报道了使用硅载流子的细间距倒装芯片互连(称为微连接)的电特性。直径为50 /spl mu/m，间距为100 /spl mu/m的微连接被组装在硅载体上，并使用传输线测试宏进行高达40 GHz的表征。单个直径50 /spl mu/m的微连接的时域和频域测量提供6 ps延迟和小于-0.5 dB的传输损耗，高达40 GHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterization of flip chip microjoins up to 40 GHz using silicon carrier

Electrical characterization results of fine pitch flip chip interconnections, called microjoins, using a silicon carrier are reported. Microjoins with 50 /spl mu/m diameter, 100 /spl mu/m pitch are assembled onto a silicon carrier and characterized up to 40 GHz using transmission line test macros. Time and frequency domain measurements of a single 50 /spl mu/m diameter microjoin give 6 ps delay and less than -0.5 dB transmission losses up to 40 GHz.

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Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.

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