用于低功耗lsi的III-V和Ge/应变SOI隧道效应场效应管技术

2015 Symposium on VLSI Technology (VLSI Technology) Pub Date : 2015-06-16 DOI:10.1109/VLSIT.2015.7223687

S. Takagi, M. Kim, M. Noguchi, S. Ji, K. Nishi, M. Takenaka

{"title":"用于低功耗lsi的III-V和Ge/应变SOI隧道效应场效应管技术","authors":"S. Takagi, M. Kim, M. Noguchi, S. Ji, K. Nishi, M. Takenaka","doi":"10.1109/VLSIT.2015.7223687","DOIUrl":null,"url":null,"abstract":"We have demonstrated high performance operation of planar-type tunnel field-effect transistors (TFETs) using Ge/ III-V materials. Tensile strain in Si channels combined with the Ge source can enhance the tunneling current because of the reduced effective bandgap. The fabricated Ge/sSOI (1.1 %) TFETs show high Ion/Ioff ratio over 107 and steep minimum subthreshold slope (SS) of 28 mV/dec. It is found that Ion and SS are improved by positive back bias. We have also demonstrated the operation of high Ion/Ioff and low SS planar-type InGaAs Tunnel FETs with Zn-diffused source junctions. Solid-phase Zn diffusion can realize steep-profile and defect-less p+/n source junctions. The small S.S. of 64 mV/dec and large Ion/Ioff ratio over 106 have been realized in the planar-type III-V TFETs.","PeriodicalId":181654,"journal":{"name":"2015 Symposium on VLSI Technology (VLSI Technology)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"III–V and Ge/strained SOI tunneling FET technologies for low power LSIs\",\"authors\":\"S. Takagi, M. Kim, M. Noguchi, S. Ji, K. Nishi, M. Takenaka\",\"doi\":\"10.1109/VLSIT.2015.7223687\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have demonstrated high performance operation of planar-type tunnel field-effect transistors (TFETs) using Ge/ III-V materials. Tensile strain in Si channels combined with the Ge source can enhance the tunneling current because of the reduced effective bandgap. The fabricated Ge/sSOI (1.1 %) TFETs show high Ion/Ioff ratio over 107 and steep minimum subthreshold slope (SS) of 28 mV/dec. It is found that Ion and SS are improved by positive back bias. We have also demonstrated the operation of high Ion/Ioff and low SS planar-type InGaAs Tunnel FETs with Zn-diffused source junctions. Solid-phase Zn diffusion can realize steep-profile and defect-less p+/n source junctions. The small S.S. of 64 mV/dec and large Ion/Ioff ratio over 106 have been realized in the planar-type III-V TFETs.\",\"PeriodicalId\":181654,\"journal\":{\"name\":\"2015 Symposium on VLSI Technology (VLSI Technology)\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 Symposium on VLSI Technology (VLSI Technology)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2015.7223687\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Symposium on VLSI Technology (VLSI Technology)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2015.7223687","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 23

摘要

我们已经证明了使用Ge/ III-V材料的平面型隧道场效应晶体管(tfet)的高性能操作。由于有效带隙的减小，硅通道中的拉伸应变与锗源的结合可以增强隧道电流。制备的Ge/sSOI (1.1%) tfet具有超过107的高离子/ off比和28 mV/dec的陡的最小亚阈值斜率(SS)。结果表明，正偏置改善了离子和SS的性能。我们还演示了具有zn扩散源结的高离子/离合和低SS平面型InGaAs隧道场效应管的工作。固相Zn扩散可以实现p+/n源结的陡轮廓和无缺陷。在平面型III-V型tfet中实现了64 mV/dec的小S.S.和106以上的大离子/开关比。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

III–V and Ge/strained SOI tunneling FET technologies for low power LSIs

We have demonstrated high performance operation of planar-type tunnel field-effect transistors (TFETs) using Ge/ III-V materials. Tensile strain in Si channels combined with the Ge source can enhance the tunneling current because of the reduced effective bandgap. The fabricated Ge/sSOI (1.1 %) TFETs show high I_on/I_off ratio over 10⁷ and steep minimum subthreshold slope (SS) of 28 mV/dec. It is found that I_on and SS are improved by positive back bias. We have also demonstrated the operation of high I_on/I_off and low SS planar-type InGaAs Tunnel FETs with Zn-diffused source junctions. Solid-phase Zn diffusion can realize steep-profile and defect-less p⁺/n source junctions. The small S.S. of 64 mV/dec and large I_on/I_off ratio over 10⁶ have been realized in the planar-type III-V TFETs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2015 Symposium on VLSI Technology (VLSI Technology)

自引率

0.00%

发文量