S. Hausmann, L. Bischoff, J. Teichert, M. Voelskow, W. Moller
{"title":"聚焦离子束注入中的辐射损伤","authors":"S. Hausmann, L. Bischoff, J. Teichert, M. Voelskow, W. Moller","doi":"10.1109/IMNC.1999.797519","DOIUrl":null,"url":null,"abstract":"Compared to conventional ion implantation, focused ion beam (FIB) implantation works with a current density which is up to five orders of magnitude higher. This has an effect on the accumulated radiation damage during the implantation process. The present work shows how the radiation damage is influenced by the dwell-time in the case of focused ion beam synthesis (IBS) of cobalt disilicide. If the accumulated damage during implantation is not too high the use of conventional ion implantation IBS results in single-crystalline CoSi/sub 2/ layers.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Radiation damage in focused ion beam implantation\",\"authors\":\"S. Hausmann, L. Bischoff, J. Teichert, M. Voelskow, W. Moller\",\"doi\":\"10.1109/IMNC.1999.797519\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Compared to conventional ion implantation, focused ion beam (FIB) implantation works with a current density which is up to five orders of magnitude higher. This has an effect on the accumulated radiation damage during the implantation process. The present work shows how the radiation damage is influenced by the dwell-time in the case of focused ion beam synthesis (IBS) of cobalt disilicide. If the accumulated damage during implantation is not too high the use of conventional ion implantation IBS results in single-crystalline CoSi/sub 2/ layers.\",\"PeriodicalId\":120440,\"journal\":{\"name\":\"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMNC.1999.797519\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.1999.797519","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Compared to conventional ion implantation, focused ion beam (FIB) implantation works with a current density which is up to five orders of magnitude higher. This has an effect on the accumulated radiation damage during the implantation process. The present work shows how the radiation damage is influenced by the dwell-time in the case of focused ion beam synthesis (IBS) of cobalt disilicide. If the accumulated damage during implantation is not too high the use of conventional ion implantation IBS results in single-crystalline CoSi/sub 2/ layers.