聚焦离子束注入中的辐射损伤

S. Hausmann, L. Bischoff, J. Teichert, M. Voelskow, W. Moller
{"title":"聚焦离子束注入中的辐射损伤","authors":"S. Hausmann, L. Bischoff, J. Teichert, M. Voelskow, W. Moller","doi":"10.1109/IMNC.1999.797519","DOIUrl":null,"url":null,"abstract":"Compared to conventional ion implantation, focused ion beam (FIB) implantation works with a current density which is up to five orders of magnitude higher. This has an effect on the accumulated radiation damage during the implantation process. The present work shows how the radiation damage is influenced by the dwell-time in the case of focused ion beam synthesis (IBS) of cobalt disilicide. If the accumulated damage during implantation is not too high the use of conventional ion implantation IBS results in single-crystalline CoSi/sub 2/ layers.","PeriodicalId":120440,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Radiation damage in focused ion beam implantation\",\"authors\":\"S. Hausmann, L. Bischoff, J. Teichert, M. Voelskow, W. Moller\",\"doi\":\"10.1109/IMNC.1999.797519\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Compared to conventional ion implantation, focused ion beam (FIB) implantation works with a current density which is up to five orders of magnitude higher. This has an effect on the accumulated radiation damage during the implantation process. The present work shows how the radiation damage is influenced by the dwell-time in the case of focused ion beam synthesis (IBS) of cobalt disilicide. If the accumulated damage during implantation is not too high the use of conventional ion implantation IBS results in single-crystalline CoSi/sub 2/ layers.\",\"PeriodicalId\":120440,\"journal\":{\"name\":\"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMNC.1999.797519\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.1999.797519","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

与传统离子注入相比,聚焦离子束(FIB)注入的电流密度要高5个数量级。这对植入过程中累积的辐射损伤有影响。本文研究了聚焦离子束合成二硅化钴时,辐射损伤受停留时间的影响。如果注入过程中累积的损伤不太高,使用常规离子注入IBS会导致单晶CoSi/sub - 2/层。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Radiation damage in focused ion beam implantation
Compared to conventional ion implantation, focused ion beam (FIB) implantation works with a current density which is up to five orders of magnitude higher. This has an effect on the accumulated radiation damage during the implantation process. The present work shows how the radiation damage is influenced by the dwell-time in the case of focused ion beam synthesis (IBS) of cobalt disilicide. If the accumulated damage during implantation is not too high the use of conventional ion implantation IBS results in single-crystalline CoSi/sub 2/ layers.
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