IDDQ测试在2011年不适用于深亚微米VLSI吗?

Chih-Wen Lu, C. Su, Chung-Len Lee, Jwu-E Chen
{"title":"IDDQ测试在2011年不适用于深亚微米VLSI吗?","authors":"Chih-Wen Lu, C. Su, Chung-Len Lee, Jwu-E Chen","doi":"10.1109/ATS.2000.893646","DOIUrl":null,"url":null,"abstract":"In this work, IDDQ current for deep submicron VLSI in year 2011 is estimated with a statistical approach according to the International Technology Roadmap for Semiconductors 1999 Edition considering process variations and different input vectors. The estimated results show that the standard deviation of the IDDQ current is proportional to the square root of the circuit size and the IDDQ currents of the defect-free and the defective devices, which are of the size up to 1/spl times/10/sup 7/ gates, are still differentiable under the condition of random process deviations and input vectors. Two new IDDQ testing schemes, which detect the defective current based on the two separate IDDQ distributions, are proposed. From the study, it is concluded that IDDQ testing is still applicable for the deep submicron VLSI for the next ten years.","PeriodicalId":403864,"journal":{"name":"Proceedings of the Ninth Asian Test Symposium","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Is IDDQ testing not applicable for deep submicron VLSI in year 2011?\",\"authors\":\"Chih-Wen Lu, C. Su, Chung-Len Lee, Jwu-E Chen\",\"doi\":\"10.1109/ATS.2000.893646\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, IDDQ current for deep submicron VLSI in year 2011 is estimated with a statistical approach according to the International Technology Roadmap for Semiconductors 1999 Edition considering process variations and different input vectors. The estimated results show that the standard deviation of the IDDQ current is proportional to the square root of the circuit size and the IDDQ currents of the defect-free and the defective devices, which are of the size up to 1/spl times/10/sup 7/ gates, are still differentiable under the condition of random process deviations and input vectors. Two new IDDQ testing schemes, which detect the defective current based on the two separate IDDQ distributions, are proposed. From the study, it is concluded that IDDQ testing is still applicable for the deep submicron VLSI for the next ten years.\",\"PeriodicalId\":403864,\"journal\":{\"name\":\"Proceedings of the Ninth Asian Test Symposium\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-12-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Ninth Asian Test Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ATS.2000.893646\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Ninth Asian Test Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ATS.2000.893646","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

在这项工作中,根据国际半导体技术路线图1999版,考虑到工艺变化和不同的输入向量,用统计方法估计了2011年深亚微米VLSI的IDDQ电流。估计结果表明,IDDQ电流的标准差与电路尺寸的平方根成正比,并且在随机过程偏差和输入向量的条件下,无缺陷器件和缺陷器件的IDDQ电流在1/spl倍/10/sup 7/门的尺寸下仍然是可微的。提出了两种新的IDDQ检测方案,基于两个独立的IDDQ分布检测缺陷电流。研究结果表明,IDDQ测试在未来十年内仍然适用于深亚微米VLSI。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Is IDDQ testing not applicable for deep submicron VLSI in year 2011?
In this work, IDDQ current for deep submicron VLSI in year 2011 is estimated with a statistical approach according to the International Technology Roadmap for Semiconductors 1999 Edition considering process variations and different input vectors. The estimated results show that the standard deviation of the IDDQ current is proportional to the square root of the circuit size and the IDDQ currents of the defect-free and the defective devices, which are of the size up to 1/spl times/10/sup 7/ gates, are still differentiable under the condition of random process deviations and input vectors. Two new IDDQ testing schemes, which detect the defective current based on the two separate IDDQ distributions, are proposed. From the study, it is concluded that IDDQ testing is still applicable for the deep submicron VLSI for the next ten years.
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