由假填充引起的互连损耗的测量

A. Tsuchiya, H. Onodera
{"title":"由假填充引起的互连损耗的测量","authors":"A. Tsuchiya, H. Onodera","doi":"10.1109/SPI.2007.4512261","DOIUrl":null,"url":null,"abstract":"This paper reports measurement results of on-chip interconnects with CMP dummy fill. CMP dummy fill is a floating metal for metal density adjustment. In high frequency above 10 GHz, the eddy current induced in dummy fills affects the interconnect loss. We fabricated test structures of on-chip interconnect with dummy fills. From the measurement results, the effect of the dummy fills on the wire resistance is not negligible even if the ground wires are adjacent to the signal wire. The dummy fills in the upper/lower metal layer affect the wire resistance and the resistance increases by 20% at 50 GHz.","PeriodicalId":206352,"journal":{"name":"2007 IEEE Workshop on Signal Propagation on Interconnects","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Measurement of interconnect loss due to dummy fills\",\"authors\":\"A. Tsuchiya, H. Onodera\",\"doi\":\"10.1109/SPI.2007.4512261\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports measurement results of on-chip interconnects with CMP dummy fill. CMP dummy fill is a floating metal for metal density adjustment. In high frequency above 10 GHz, the eddy current induced in dummy fills affects the interconnect loss. We fabricated test structures of on-chip interconnect with dummy fills. From the measurement results, the effect of the dummy fills on the wire resistance is not negligible even if the ground wires are adjacent to the signal wire. The dummy fills in the upper/lower metal layer affect the wire resistance and the resistance increases by 20% at 50 GHz.\",\"PeriodicalId\":206352,\"journal\":{\"name\":\"2007 IEEE Workshop on Signal Propagation on Interconnects\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Workshop on Signal Propagation on Interconnects\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SPI.2007.4512261\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Workshop on Signal Propagation on Interconnects","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SPI.2007.4512261","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

摘要

本文报道了采用CMP虚拟填充的片上互连的测量结果。CMP假体填料是一种用于调整金属密度的浮动金属。在10ghz以上的高频中,假填充中产生的涡流影响互连损耗。我们制作了带有假填充物的片上互连测试结构。从测量结果来看,即使地线与信号线相邻,假填充对导线电阻的影响也是不可忽略的。上/下金属层的假人填充影响导线电阻,在50 GHz时电阻增加20%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Measurement of interconnect loss due to dummy fills
This paper reports measurement results of on-chip interconnects with CMP dummy fill. CMP dummy fill is a floating metal for metal density adjustment. In high frequency above 10 GHz, the eddy current induced in dummy fills affects the interconnect loss. We fabricated test structures of on-chip interconnect with dummy fills. From the measurement results, the effect of the dummy fills on the wire resistance is not negligible even if the ground wires are adjacent to the signal wire. The dummy fills in the upper/lower metal layer affect the wire resistance and the resistance increases by 20% at 50 GHz.
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