RISC-V处理器单事件效应仿真方法

Quanxiu Chen, Yi Liu, Zhenyu Wu, Jian Liao
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引用次数: 1

摘要

为了准确评估软误差下空间应用的可靠性,提出了大规模集成电路单事件效应仿真方法。该仿真方法分为故障模型、故障注入和目标系统仿真三个层次,由TCAD、SPICE电路模拟器和门级网表分析工具等多种仿真工具组成。仿真目标系统采用4级有序RISC-V软处理器。该仿真方法具有以下优点:它是测试任何大规模集成电路及其外围元件的通用方法。2. 该方法通过输入电路的门级网表并添加仿真刺激,自动得到仿真报告。3.软误差跟踪:直观地报告故障节点和节点电压波形。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Single Event Effect Simulation Method for RISC-V Processor
For accurately assessing the reliability of space application toward soft errors, this paper proposed a method of Single Event Effect simulation method for Large Scale Integrated Circuits (LSI). This simulation method divided into three levels: fault model, fault injection and target system simulation, which consists of a variety of simulation tools, such as TCAD, SPICE circuit simulator and analyzing tools of gate-level netlist. A 4-stage in-order RISC-V soft processor is used as the simulation target system. The simulation method has the following advantages: 1. It is a universal method of testing any large-scale integrated circuit including its peripheral components. 2. By input the gate-level net-list of the circuit and add the simulation stimulus, the method can get the simulation report automatically. 3. The soft error can be traced: The faulty node and the voltage waveform of the node can be reported intuitively.
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