体积和FDSOI亚微米CMOS晶体管对单事件瞬变的弹性

2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS) Pub Date : 2015-12-01 DOI:10.1109/ICECS.2015.7440267

W. C. Bartra, A. Vladimirescu, R. Reis

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引用次数: 10

摘要

本研究比较了32nm Bulk和28nm完全耗尽绝缘体上硅(FDSOI)晶体管对漏极区重离子影响的弹性。这些冲击是在不同的晶体管位置以不同的冲击角度进行的，而以前的研究只考虑了0度角的冲击。这种比较是在关闭状态下使用2D TCAD模拟的设备进行的。结果表明，FDSOI晶体管的弹性比Bulk MOSFET提高了7.7倍。

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Bulk and FDSOI Sub-micron CMOS transistors resilience to single-event transients

This work presents a comparison of resilience between a 32nm Bulk and a 28nm Fully-Depleted Silicon On Insulator (FDSOI) transistor to heavy ion impacts on the Drain region. The impacts were performed in different transistor locations at different impact angles whereas previous works considered the impact just at a 0 degree angle. This comparison is performed with the device in the off-state using 2D TCAD simulations. The results show a 7.7 times improved resilience of the FDSOI transistor compared to that of Bulk MOSFET.

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2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)

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